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this is preliminary information on a new product now in development or undergoing evaluation. details are subject to change without notice. august 2014 docid026763 rev 2 1/13 STF7N65M2 n-channel 650 v, 0.98 ? typ., 5 a mdmesh? m2 power mosfet in a to-220fp package datasheet - preliminary data figure 1. internal schematic diagram features ? extremely low gate charge ? excellent output capacitance (c oss ) profile ? 100% avalanche tested ? zener-protected applications ? switching applications description this device is an n-channel power mosfet developed using the mdmesh? m2 technology. thanks to the strip layout associated to an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. it is therefore suitable for the most demanding high efficiency converters. to-220fp 1 2 3 am15572v1 order code v ds r ds(on) max i d STF7N65M2 650 v 1.15 ? 5 a table 1. device summary order code marking package packaging STF7N65M2 7n65m2 to-220fp tube www.st.com
contents STF7N65M2 2/13 docid026763 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
docid026763 rev 2 3/13 STF7N65M2 electrical ratings 13 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 5 (1) 1. limited by maximum junction temperature. a i d drain current (continuous) at t c = 100 c 3.2 (1) a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 20 (1) a p tot total dissipation at t c = 25 c 20 w v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s; t c =25 c) 2500 v dv/dt (3) 3. i sd 5 a, di/dt 400 a/s; v ds peak < v (br)dss , v dd =400 v peak diode recovery voltage slope 15 v/ns dv/dt (4) 4. v ds 520 v mosfet dv/dt ruggedness 50 t stg storage temperature - 55 to 150 c t j max. operating junction temperature table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 6.25 c/w r thj-amb thermal resistance junction-ambient max 62.5 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not repetitive (pulse width limited by t jmax ) 1a e as single pulse avalanche energy (starting t j =25c, i d = i ar ; v dd =50) 103 mj
electrical characteristics STF7N65M2 4/13 docid026763 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0, i d = 1 ma 650 v i dss zero gate voltage drain current v gs = 0, v ds = 650 v 1 a v gs = 0, v ds = 650 v, t c =125 c 100 a i gss gate-body leakage current v ds = 0, v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 2.5 a 0.98 1.15 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 -270-pf c oss output capacitance - 14.5 - pf c rss reverse transfer capacitance -0.8-pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v ds = 0 to 520 v, v gs = 0 - 108 - pf r g intrinsic gate resistance f = 1 mhz open drain - 7 - ? q g total gate charge v dd = 520 v, i d = 5 a, v gs = 10 v (see figure 15 ) -9-nc q gs gate-source charge - 2.3 - nc q gd gate-drain charge - 4.3 - nc table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 325 v, i d = 2.5 a, r g = 4.7 , v gs = 10 v (see figure 14 and 19 ) -8-ns t r rise time - 20 - ns t d(off) turn-off delay time - 30 - ns t f fall time - 20 - ns
docid026763 rev 2 5/13 STF7N65M2 electrical characteristics 13 table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 5 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 20 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 5 a, v gs = 0 - 1.6 v t rr reverse recovery time i sd = 5 a, di/dt = 100 a/s v dd = 60 v (see figure 19 ) - 275 ns q rr reverse recovery charge - 1.62 c i rrm reverse recovery current - 11.8 a t rr reverse recovery time i sd = 5 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 19 ) - 430 ns q rr reverse recovery charge - 2.54 c i rrm reverse recovery current - 11.9 a
electrical characteristics STF7N65M2 6/13 docid026763 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance i d 10 1 0.1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 1ms 100s 0.01 tj=150c tc = 2 5 c single pulse 10ms 100 gipg060820141147fsr figure 4. output characteristics figure 5. transfer characteristics i d 6 2 0 0 5 v ds (v) 10 (a) 15 4v 5v v gs =7, 8, 9, 10v 4 8 20 6v gipg060820141159fsr i d 6 4 2 0 04 v gs (v) 8 (a) 26 8 v ds =20v gipg060820141210fsr figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance v gs 6 4 2 0 0 4 q g (nc) (v) 8 6 8 10 v dd =520v i d =5a 300 200 100 0 400 500 v ds 2 10 v ds (v) 12 600 gipg060820141216fsr r ds(on) 0.96 0.94 0.92 0 2 i d (a) ( ) 1 3 0.98 v gs =10v 4 5 1.0 1.02 1.04 gipg060820141221fsr
docid026763 rev 2 7/13 STF7N65M2 electrical characteristics 13 figure 8. capacitance variations figure 9. output capacitance stored energy figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. source-drain diode forward characteristics figure 13. normalized v (br)dss vs temperature c 100 10 1 0.1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss 1000 gipg060820141238fsr e oss 1.2 0.6 0 0 100 v ds (v) (j) 400 200 300 1.8 500 600 2.4 gipg060820141302fsr v gs(th) 0.9 0.8 0.7 0.6 -75 0 t j (c) (norm) 25 1.0 75 25 125 i d =250a 1.1 am18065v1 r ds(on) 1.8 1.0 0.2 -75 0 t j (c) (norm) -25 75 25 125 0.6 1.4 2.2 i d =2.5a v gs =10v am18066v1 v sd 2 i sd (a) (v) 134 0.5 0.6 0.7 t j =-50c t j =150c t j =25c 0.8 0.9 1 5 0 1.1 gipg060820141313fsr v (br)dss -75 0 t j (c) (norm) -25 75 25 125 0.88 0.92 0.96 1.00 1.04 1.08 i d =1ma am18067v1
test circuits STF7N65M2 8/13 docid026763 rev 2 3 test circuits figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for inductive load switching and diode recovery times figure 17. unclamped inductive load test circuit figure 18. unclamped inductive waveform figure 19. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd $0y 9 %5'66 9 '' 9 '' 9 ' , '0 , ' am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid026763 rev 2 9/13 STF7N65M2 package mechanical data 13 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STF7N65M2 10/13 docid026763 rev 2 figure 20. to-220fp drawing 7012510_rev_k_b
docid026763 rev 2 11/13 STF7N65M2 package mechanical data 13 table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d 2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 33.2
revision history STF7N65M2 12/13 docid026763 rev 2 5 revision history table 10. document revision history date revision changes 29-jul-2014 1 first release. 07-aug-2014 2 updated r ds(on) and typical values in table 5: on /off states , table 6: dynamic , table 7: switching times and table 8: source drain diode . added section 2.1: electrical characteristics (curves) .
docid026763 rev 2 13/13 STF7N65M2 13 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2014 stmicroelectronics ? all rights reserved

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